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INVENTO

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Transistors By INVENTO

by INVENTO
Price: Price240 Mrp Price400
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by INVENTO
Price: Price200 Mrp Price350
You Save: -43%
INVENTO 10Pcs MJE13003 Bipolar (BJT) 13003 Transistor, NPN, 400 V, 10 MHz, 1.4 W, 1.5 A, 4 hFE - Product Features
  • These devices are designed for highvoltage, highspeed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.
  • Reverse Biased SOA with Inductive Loads @ TC = 100C; 700 V Blocking Capability.
  • Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100C tc @ 1 A, 100C is 290 ns (Typ)
  • Collector Emitter Voltage V(br) ceo: 400V; Transition Frequency ft: 10MHz; Power Dissipation Pd: 1.4W; DC Collector Current: 1.5A; DC Current Gain hFE: 4hFE.
  • Package Include 10 x MJE13003
 
INVENTO 2Pcs ULN2003A ULN2003APG Stepper Motor Driver IC Bipolar Transistor Array, Darlington, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP - Product Features
  • High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and logic buffers.
  • Output can be paralleled for higher current. Input pins are placed opposite to output pins to simplify layout. TTL/CMOS/PMOS/DTL compatible inputs
  • Number of Pins: 16; Collector Emitter Saturation Voltage: 1.6 V; Collector Emitter Voltage (VCEO): 50 V; Max Collector Current: 500 mA; Max Operating Temperature: 85 C
  • Max Power Dissipation: 1.47 W; Min Operating Temperature: -40 C; Output Current: 500 mA; Output Voltage: 50 V.
  • Package Include: 2 x ULN2003APG
 
INVENTO 10Pcs 2N3906 BJT Bipolar Single Transistor, High Speed Switching, PNP, -40 V, 250 MHz, 625 mW, 200 mA, 100 hFE - Product Features
  • Current - Collector (Ic) (Max):200mA; Voltage - Collector Emitter Breakdown (Max):40V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA; DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
  • Power - Max:600mW; Frequency - Transition:250MHz
  • Operating Temperature:-55 degreeC ~ 150 degreeC (TJ); Mounting Type:Through Hole
  • Package Include: 10 x 2N3906
 
INVENTO 5Pcs TIP122 Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 65 W, 5 A, 1000 hFE - Product Features
  • The TIP122 from Multicomp are through hole, darlington transistor in TO-220 package. This transistor is used for low speed switching and amplification.
  • Collector emitter voltage (Vce) of 100V. Continuous collector current (Ic) of 5A.
  • Power dissipation of 65W. Operating junction temperature range from -65 degreeC to 150 degreeC
  • Collector emitter saturation voltage of 2V at Ic=3A. DC current gain of 1000 at Ic=3A
  • Package Include: 5 x TIP122
 
INVENTO 2Pcs TIP41C Bipolar (BJT) Single Transistor, NPN, 100 V, 65 W, 6 A, 75 hFE - Product Features
  • The TIP41C is a base island technology NPN Power Transistor for audio, power linear and switching applications.
  • Input Voltage: /; Output Voltage: 100V
  • Low frequency or audio amplification (LF), power amplification (L)
  • Minimum DC current gain (hFE) at a certain Ic, Vce: 15 @ 3A, 4V
  • Package Include: 2 x TIP41C Transistor
 
INVENTO 30Pcs BC557 Bipolar (BJT) Single Transistor, PNP, -45 V, 150 MHz, 500 mW, -100 mA, 110 hFE - Product Features
  • Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V.
  • Transition Frequency ft: 150MHz; Power Dissipation Pd: 500mW.
  • DC Collector Current: -100mA; DC Current Gain hFE: 110hFE.
  • No. of Pins: 3Pins; Operating Temperature Max: 150 degreeC.
  • Package Include 30 x BC557
 
INVENTO 5Pcs BF494 NPN Medium Frequency Transistor For DIY - Product Features
  • Collector-Emitter Volt (Vceo): 20V; Collector-Base Volt (Vcbo): 30V
  • Collector Current (Ic): 0.03A
  • hfe: 67-220 @ 1mA; Power Dissipation (Ptot): 300mW
  • Current-Gain-Bandwidth (ftotal): 120MHz
  • Package Include: 5 x BF494
 
INVENTO 2Pcs MD1803DFX MD1803 High voltage NPN Power transistor for standard definition CRT display - Product Features
  • The MD1803DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage.
  • More stable performance versus operating temperature variation. Low base drive requirement.
  • Tighter hFE range at operating collector current.
  • Applications: Horizontal deflection output for TV
  • Package Include: 2 x MD1803DFX
 
INVENTO 2pcs BT139-800E,127 - Triac, 800 V, 16 A, TO-220AB, 25 mA, 1.5 V, 5 W High Switching Speed Silicon Transistor - Product Features
  • Planar passivated sensitive gate four quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gate \"series E\" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
  • Direct triggering from low power drivers and logic ICs. High blocking voltage capability
  • Planar passivated for voltage ruggedness and reliability. Sensitive gate, Triggering in all four quadrants
  • Application: General purpose phase control, General purpose switching
  • Package Include: 2 x BT139-800E
 
INVENTO 2pcs D92-02 Super High Speed Switching Rectifier Diode New, 0.59" Width, 1.18" Length - Product Features
  • Product Name : Super High Speed Rectifer;Model No. : D92-02;VRRM : 200V.
  • IO : 100A;VFM : 0.95V;IRRM : 200A
  • Trr : 0.04 S;Thermal : 1.5C/W;Through Hole Diameter : 3mm / 0.118''
  • Terminal Length : 15mm/0.59'';Terminal Spacing Pitch : 5mm/ 0.2\";Total Size : 30 x 15 x 4mm / 1.18'' x 0.59'' x 0.16'' (L*W*H)
  • Package Include 2 x D92-02
 
Invento 2pcs IRFZ44N - 55V 49A N channel Power MOSFET TO220 - Product Features
  • Advanced Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
  • This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
  • VDSS = 55V
  • RDS(on) = 17.5m??
  • ID = 49A
 
INVENTO 4Pcs UA741CP 741CP 741 IC Operational Amplifier, 1 Amplifier, 1 MHz, 0.5 V/?s, ± 9V to ± 15V, DIP, 8 Pins - Product Features
  • The UA741CP is a general purpose operational amplifier in 8 pin DIP package. The high common mode input voltage range and absence of latch up make the amplifier ideal for voltage follower applications. The device is short circuit protected and internal frequency compensation ensures stability without external components. A low value potentiometer may be connected between offset null inputs to null out offset voltage.
  • Offset voltage null capability; Large common mode and differential voltage range; Frequency compensation and latch up are not required; Gain bandwidth product of 1MHz; Supply voltage range from 5V to 15V.
  • Slew rate at unity gain is 0.5V/?s; Input offset voltage of 1mV at TA = 25 degreeC; Input bias current of 80nA at TA = 25 degreeC; Common mode rejection ratio (CMRR) of 70dB at TA = 25 degreeC; Operating temperature range from 0 degreeC to 70 degreeC.
  • Applications: Audio, Signal Processing, Consumer Electronics, Portable Devices
  • Package Include 4 x UA741CP
 
INVENTO 5Pcs BD140 Bipolar (BJT) Single Transistor, General Purpose, PNP, 80 V, 12.5 W, 1.5 A, 40 hFE - Product Features
  • The BD140 from Multicomp are through hole, PNP power transistor in TO-126 metal can package. This device is usd for medium power, linear and switching applications.
  • Collector to emitter voltage (Vce) is -80V. Collector current (Ic) is -1.5A
  • Power dissipation (Pd) is 12.5W. Collector emitter saturation voltage of -500mV at Ic=10mA.
  • Operating junction temperature range from -55 degreeC to 150 degreeC
  • Package Include: 5 x BD140
 
INVENTO 10Pcs 2N2907 Bipolar (BJT) Single Transistor, PNP, -60 V, 200 MHz, 400 mW, -600 mA, 50 hFE - Product Features
  • Silicon planar PNP switching transistor for DC to VHF amplifier, switching and linear applications.
  • Collector to emitter voltage (Vce) is -60V. Collector current (Ic) is -600mA
  • Power dissipation (Pd) is 400mW
  • DC Current Gain hFE: 52hFE
  • Package Include: 10 x 2N2907 Transistor
 
INVENTO 10Pcs 2N7000 MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V - Product Features
  • he 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance.
  • It can be used in most applications requiring up to 400mA DC and can deliver pulsed current up to 2A. It is also suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate
  • Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.2ohm
  • Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power Dissipation Pd: 400mW
  • Package Include: 10 x 2N7000A
 
INVENTO 4Pcs 74HC132N 74132 IC NAND Gate, HC Family, Schmitt Trigger, 4 Gate, 2 Input, 5.2 mA, 2V to 6V, DIP-14 - Product Features
  • The 74HC132N is a quad 2-input NAND Schmitt trigger is a high-speed Si-gate CMOS device and is pin compatible with low-power Schottky TTL (LSTTL ). It is specified in compliance with JEDEC standard no-7A. The 74HC132 features reduced input threshold levels to allow interfacing to TTL logic levels. Inputs also include clamp diodes that enable the use of current limiting resistors to interface inputs to voltages in excess of VCC.
  • Schmitt trigger inputs transform slowly changing input signals into sharply defined jitter-free output signals. The inputs switch at different points for positive and negative-going signals. The difference between the positive voltage VT+ and the negative voltage VT- is defined as the input hysteresis voltage VH.
  • Logic Family / Base Number: 74HC132; Logic Type: NAND; Output Current: 5.2mA; No. of Inputs: 2; Supply Voltage Min: 2V
  • Supply Voltage Max: 6V; No. of Pins: 14Pins; Logic IC Family: 74HC; Logic IC Base Number: 74132
  • Package Include 4 x 74132 IC
 

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