INVENTO 10Pcs 2N7000 MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
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Home » Electrical Components » Transistors » INVENTO 10Pcs 2N7000 MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
500
300
Product Details :
- Brand : INVENTO
- Manufacturer : INVENTO
- Country of Origin : India
- Model number : ISC 794
- Colour : Black
- Number of Memory Sticks : 10
- Item Weight : 300 g
- Product Dimensions : 1.5 x 0.5 x 0.5 cm; 300 g
- Item model number : ISC 794
- Item Height : 5 Millimeters
- Item Width : 5 Millimeters
- Are batteries included? : No
Product Features :
- he 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance.
- It can be used in most applications requiring up to 400mA DC and can deliver pulsed current up to 2A. It is also suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate
- Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.2ohm
- Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power Dissipation Pd: 400mW
- Package Include: 10 x 2N7000A
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