Transistors By Sharvi

• Series: BU208; Product Type: BJTs Bipolar Transistors; Transistor Polarity: NPN; Mounting Style: Through Hole
• Configuration: Single; Collector- Emitter Voltage VCEO Max: 700 V; Collector- Base Voltage VCBO: 1500 V; Package/Case: TO-3
• Emitter- Base Voltage VEBO: 5 V; Continuous Collector Current: 5 A; Base Current-Peak: 3.5 A
• Pd Power Dissipation: 60 W; Minimum Operating Temperature: 65; Maximum Operating Temperature: + 115
• Applications: Signal Processing; Power Management; Portable Devices; Consumer Electronics; Industrial

• Low saturation voltage; Simple drive requirements; High safe operating area; For low distortion complementary designs; Easy to carry and handle
• Manufacturer Part No: BD679; Product Type: Darlington Transistors; Configuration: Single; Transistor Polarity: NPN
• Collector- Emitter Voltage VCEO Max: 80 V; Emitter- Base Voltage VEBO: 5 V; Collector- Base Voltage VCBO: 80 V; Maximum DC Collector Current: 4 A; Maximum Collector Cut-off Current: 200 uA
• Pd Power Dissipation: 40 W; Continuous Collector Current: 4 A; DC Collector/Base Gain hFE Min: 750; Minimum Operating Temperature: -55 degreeC; Maximum Operating Temperature: +150 degreeC; Mounting Style: Through Hole; Package/Case: TO-225AA
• Applications: Medium Power Linear; Switching Application; GeneralPurpose Amplifier

• Max Collector Base Voltage: 500 V
• Max Collector Emitter Voltage: 400 V
• Max Emitter Base Voltage: 7 V
• Max Collector Current: 15 A

• PNP, Silicon
• Max Collector Continuous Current: 1.5 A
• Max Collector-Emitter Voltage: 60 V
• Max Collector-Base Voltage: 60 V
• Max Emitter-Base Voltage: 5 V

• Manufacturer Part No: EL817; Product Type: Transistor Output Optocoupler; Output Type: NPN Phototransistor; Number of Channels: 1 Channel; If Forward Current: 60 mA
• Maximum Collector Emitter Voltage: 35 V; Maximum Collector Current: 50 mA; Isolation Voltage: 5000 Vrms
• Maximum Collector Emitter Saturation Voltage: 0.2 V; Forward Voltage: 1.4 V; Reverse Voltage: 6 V; Power Dissipation: 200 mW
• Minimum Operating Temperature: 55 degreeC; Maximum Operating Temperature: + 110 degreeC; Configuration: 1 Channel; Current Transfer Ratio: 50 %
• Fall Time: 18 us; Rise Time: 18 us; Mounting Style: Through Hole; Package/Case: PDIP-4

• AC or polarity insensitive input
• Built-in reverse polarity input protection
• I/O compatible with integrated circuits
• Industry standard DIP package
• Isolation test voltage: 5300 VRMS

• Hermetically sealed package; Narrow reception angle
• Operating/Storage Temperature: -65 to +125 degreeC; Collector to Emitter Breakdown Voltage: 45 V
• Collector to Base Breakdown Voltage: 45 V; Emitter to Base Breakdown Voltage: 5 V
• Power Dissipation (TA = 25 degreeC): 300mW
• Power Dissipation (TC = 25 degreeC): 600mW

• Configuration: 3 Phase
• Current : 20A; Voltage: 600V
• Voltage Isolation: 1500Vrms
• Package: 25-Power DIP Module

• Max Collector to Emitter Breakdown Voltage: 25 V; Max Collector to Base Breakdown Voltage: 25 V
• Max Emitter to Base Breakdown Voltage: 12 V; Hermetically sealed package
• Narrow reception angle
• Operating/Storage Temperature: -65 to +125 deg C
• Power Dissipation (TA = 25 deg C): 300mW; Power Dissipation (TC = 25 deg C): 600mW

• Collector-to-Emitter Voltage: 600V; Continuous Collector Current: 23 @25 degreeC; Continuous Collector Current: 14A @100 degreeC; Pulsed Collector Current: 46A
• Clamped Inductive Load Current: 46A; Gate-to-Emitter Voltage: 20V; Short Circuit Withstand Time: 10?s; Reverse Voltage Avalanche Energy: 10 mJ
• Optimized for high operating frequency (over 5kHz); Short circuit rated 10?s @ 125 degreeC, V GE = 15V; Maximum Power Dissipation: 100 Watt @25 degreeC
• Maximum Power Dissipation: 42 Watt @100 degreeC; Operating Junction and Storage Temperature Range: -55 ~ +150 degreeC; Package: TO-220AB
• Packaged by:- Sharvi Technologies (OPC) Pvt. Ltd.; Address:- #09, CK Nagar, AECS layout, Hosa Road, Bangalore-560100

• VCES : 900 V
• IC : 60 A
• Integrated fast-recovery diode
• Packaged by:- Sharvi Technologies (OPC) Pvt. Ltd.
• Address:- #09, CK Nagar, AECS layout, Hosa Road, Bangalore-560100

• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.; Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3; Collector-to-Emitter Voltage: 600V
• Continuous Collector Current: 40A @25 degreeC; Continuous Collector Current: 20A 100 degreeC; Pulsed Collector Current: 160A
• Clamped Inductive Load Current: 160A; Diode Continuous Forward Current: 15 @100 degreeC; Diode Maximum Forward Current: 160A
• Gate-to-Emitter Voltage: 20V; Maximum Power Dissipation: 160 Watt @25 degreeC; Maximum Power Dissipation: 65 Watt @100 degreeC; Package: TO-247AC
• Packaged by:- Sharvi Technologies (OPC) Pvt. Ltd.; Address:- #09, CK Nagar, AECS layout, Hosa Road, Bangalore-560100

• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.; Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• Collector-to-Emitter Voltage: 600V; Continuous Collector Current: 13A @25 degreeC; Continuous Collector Current: 6.5A @100 degreeC
• Pulsed Collector Current: 52A; Clamped Inductive Load Current: 52A; Diode Continuous Forward Current: 7 @100 degreeC
• Diode Maximum Forward Current: 52A; Gate-to-Emitter Voltage: 20V; Maximum Power Dissipation: 60W @25 degreeC
• Operating Junction and Storage Temperature Range: -55 ~ +150 degreeC; Package: TO-220AB