Transistors By Generic

• Supply voltage: 7V; High-level output voltage: 7V; Reverse voltage: 5V; Forward current: 20mA
• Low-level output current: 50mA; Isolation voltage : 3.75kV; Power dissipation: 40mW; Collector power dissipation: 85mW; Soldering temperature: 270?C; Operating temperature: -40~85?C; Storage temperature: -40~125?C
• 5 pin Mini-flat package; Double transfer mold package (Ideal for Flow Soldering); High noise immunity due to high instantaneous common-mode rejection voltage (CMH: MIN.10 kV/?s,; CML: MIN. 10 kV/?s); High-speed response (tPHL: TYP. 48 ns, tPLH: TYP. 50 ns); High isolation voltage between input and output (Viso(RMS): 3.75 kV
• Applications Include:- Programmable Controllers; Power Supplies; Inverter
• Packaged by:- Sharvi Technologies (OPC) Pvt. Ltd.; Address:- #09, CK Nagar, AECS layout, Hosa Road, Bangalore-560100

• Low on-Voltage Drop (VCE Sat); Low Cres/Cies ratio (No cross conduction susceptibility)
• Short Circuit withstand Time: 10us; Collector-to-Emitter Voltage: 600V
• Continuous Collector Current @ Tc=25 deg C : 35A
• Operating Junction and Storage Temperature Range: 55 deg C to +150 deg C
• Packaged by:- Sharvi Technologies (OPC) Pvt. Ltd.; Address:- #09, CK Nagar, AECS layout, Hosa Road, Bangalore-560100

• TBD62003APG DIP16

• 5V 30A 1 Channel Relay Module With Optocoupler Low Level Trigger

• OEN 58-12-2C 12V 5A DPDT RELAY 28.5 - 12.5 - 24.5mm

• Aluminium Heat sink Plate - 100mm X 40mm X 20mm

• Part Number: EL817S1 (B) (TU) F; Number of Channels: 1 Channel; Maximum Collector-Emitter Voltage: 80V; Maximum Collector Current: 50 mA; Isolation Voltage: 5000Vrms; Maximum Collector-Emitter Saturation Voltage: 0.2V
• Vf Forward Voltage: 1.2V; Vr Reverse Voltage: 6V; Pd Power Dissipation: 200mW; Rise Time: 4s; Fall Time: 3s; Operating Temperature Range: -30 to 100 degreeC; Mounting Type: SMD/SMT; Package/Case: SMD
• Dimension & Weight:- Length: 6.12mm; Width: 4.69mm; Height: 3.61mm; Approx Weight: 1gm
• Applications Include:- Programmable controllers; System appliances, measuring instruments; Telecommunication equipment; Home appliances, such as fan heaters, etc.; Signal transmission between circuits of different potentials and impedances
• Packaged by:- Sharvi Technologies (OPC) Pvt. Ltd.; Address:- #09, CK Nagar, AECS layout, Hosa Road, Bangalore-560100

• Number of Channels: 1 Channel; Mosfet Type: N-Channel
• Drain-Source Breakdown Voltage: 55V; Continuous Drain Current: 80A
• Drain-Source Resistance: 8Ohms; Gate-Source Voltage: 20V
• Gate Charge: 155 NC; Power Dissipation: 300W
• Operating Temperature Range: -55 175 degreeC

• IGBT 25N120R FSC 25N120 25A 1200V IGBT Transistor

• Max Drain-Source Voltage: 600V
• Max Gate-Source Voltage: + 30V
• Max Continuous Drain Current, VGS @ 10 V, TC = 25 deg C: 10A

• IRF540N, MOSFET N
• IT IS A 100V 33A
• MOSFET N 100V 33A(5psc)
• The IRF540N is a MOSFET N-channel power transistor

• Transistor Polarity: N-Channel; Drain-Source Voltage: 30VDC; Drain-Gate Voltage: 30VDC
• Reverse Gate-Source Voltage: 30VDC; Forward Gate Current: 10mA; Gate-Source Cut-off Voltage: 8VDC
• Gate-Source Voltage: 7.5VDC; Zero-Gate Voltage Drain Current: 20mA; Operating Temperature Range: -65 150 degreeC
• Power Dissipation: 300mW; Advanced process technology; Low error voltage
• Fast switching speed; Full-voltage operation; High power and current handling capability; Package: Metal TO-72