Transistors By Generic

• 600 V 30 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection; Low-Loss, Short-Circuit Rated IGBTs
• Very Low Thermal Resistance Using AlN DBC Substrate
• Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing
• Dedicated Vs Pins Simplify PCB Layout
• Single-Grounded Power Supply; Isolation Rating: 2500 Vrms / min

• N-Channel
• Fast switching
• Max Drain-Source Voltage: 900V
• Max Gate-Source Voltage: + 30V
• Max Continuous Drain Current, VGS @ 10 V, TC = 25 deg C: 9A

• Transistor Polarity: N-Channel; Number of Channel: 1 Channel
• Gate-Source Voltage: 20V; Drain-Source Breakdown Voltage: 60V; Continuous Drain Current: 50A
• Drain-Source Resistance: 0.018Ohms; Gate Charge: 60 nC; Operating Temperature Range: -55 ~ 175 degreeC
• Power Dissipation: 110W; 100% avalanche tested
• Application-oriented characterization; Switching application; Package: TO-220

• Transistor Polarity: N-Channel; Drain-Source Voltage: 30VDC; Drain-Gate Voltage: 30VDC; Reverse Gate-Source Voltage: 30VDC
• Forward Gate Current: 10mA; Gate-Source Cut-off Voltage: 6VDC; Gate-Source Voltage: 4VDC
• Zero-Gate Voltage Drain Current: 10mA; Operating Temperature Range: -65 150 degreeC; Power Dissipation: 300mW
• Advanced process technology; Low error voltage; Fast switching speed
• Full-voltage operation; High power and current handling capability; Package: Metal TO-72

• Transistor Polarity: N-Channel; Gate-Source Breakdown Voltage: 40V; Drain-Source Current: 30mA
• Drain-Source Resistance: 100Ohms; Input Capacitance: 14pF; Gate to Source Forward Voltage: 1V
• Drain to Source ON Voltage: 0.4V; Reverse Transfer Capacitance: 3.5pF; Operating Temperature Range: -55 125 degreeC
• Power Dissipation: 1.8W; Advanced process technology; Low error voltage
• Fast switching speed; Full-voltage operation; High power and current handling capability; Package: TO-18

• 0.22 A, 50 V. RDS(ON) = 3.5 @ VGS = 10 V; RDS(ON) = 6.0 @ VGS = 4.5 V;; High density cell design for extremely low RDS(ON)
• Rugged and Reliable; Compact industry standard SOT-23 surface mount package
• Max Drain-Source Voltage (VDSS): 50V; Max Gate-Source Voltage (VGSS): + 50V
• Max Drain Current Continuous (ID): 0.22A; Max Drain Current Pulsed (ID): 0.88A
• Maximum Power Dissipation (PD): 0.36W; Operating and Storage Junction Temperature Range: 55 to +150 degreeC

• Applications Include:- Switching application
• Length: 10.4mm; Width: 4.6mm; Height: 9.15mm; Unit Weight: 3gm
• Configuration: Single; Transistor Polarity: N-Channel; Number of Channels: 1 Channel; Drain-Source Breakdown Voltage: 60V; Continuous Drain Current: 60A
• Drain-Source Resistance: 16 mOhms; Gate-Source Voltage: 20V ~ +20V; Gate-Source Threshold Voltage: 2 V; Gate Charge: 54 nC; Fall Time: 20 ns
• Rise Time: 65 ns; Minimum Operating Temperature: 55 C; Maximum Operating Temperature: + 175 C; Power Dissipation: 110W; Mounting Style: Through Hole; Package/Case: TO-220

• INTERBEST | ISO Standard GENUINE 7812 12V VOLTAGE REGULATOR IC 10 Nos .
• 7812 provides +12V regulated power supply
• Voltage Step Down Converter IC
• Package Dimensions?8.7 x 5.2 x 2.6 cm; 10 Grams
• Provide up to 1A of output current at a fixed 12V output voltage

• TBD62003APG DIP16

• Transistor Polarity: N-Channel; Gate-Source Breakdown Voltage: 40V; Drain-Source Current: 75mA
• Drain-Source Resistance: 60Ohms; Input Capacitance: 14pF; Gate to Source Forward Voltage: 1V
• Drain to Source ON Voltage: 0.4V; Reverse Transfer Capacitance: 3.5pF; Operating Temperature Range: -55 125 degreeC
• Power Dissipation: 1.8W; Advanced process technology; Low error voltage
• Fast switching speed; Full-voltage operation; High power and current handling capability; Metal package: TO-18

• Re-designed case, it is very beautiful, and it is a wonderful gift for children.
• A detailed Tutorial/guidebook(PDF) with 20 lessons is provided.
• UNO R3 Board included

• Sigma Electronics H-output MD1803D

• Model No: K2622; Number of Channels: 1 Channel; Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage: 900V; Continuous Drain Current: 9A; Drain-Source Resistance: 1.1 Ohms
• Gate-Source Voltage: 30V; Gate Charge: 58 NC; Operating Temperature Range: -55~150 degreeC
• Power Dissipation:150W; 9A,900V, RDS(on)(Max1.1??)@VGS=10V; Ultra-low Gate charge(Typical 58nC)
• Fast Switching Capability; 100%Avalanche Tested; Package: TO-3PN

• Max Drain-Source Voltage: 100V
• Max Gate-Source Voltage: + 20V
• Max Continuous Drain Current, VGS @ 10 V, TC = 25 deg C: 35A

• N-Channel
• Fast switching
• Max Drain-Source Voltage: 900V
• Max Gate-Source Voltage: + 30V
• Max Continuous Drain Current, VGS @ 10 V, TC = 25 deg C: 5A