Transistors By Generic

• Collector current up to 700mA; Collector-Emitter voltage up to 20 V;
• Complementary to S8550; Max Collector-Base Voltage (VCBO): 30V; Max Collector-Emitter Voltage (VCEO): 20V
• Max Emitter-Base Voltage (VEBO): 5V; Max Collector Current (Ic): 700mA
• Max Collector Dissipation (TA=25 degreeC) (Pc): 1W; Max Junction Temperature (Tj): 150 degreeC; Storage Temperature (TSTG): -65 degreeC to 150 degreeC
• Applications Include: NPN transistors are mainly used in switching applications.; Used in amplifying circuit applications.; Used in the Darlington pair circuits to amplify weak signals.; NPN transistors are used in the applications where there is a need to sink a current.; Used in some classic amplifier circuits, such as ?push-pull amplifier circuits.; In temperature sensors.; Very High frequency applications.; Used in logarithmic convertors.

• VO Output voltage50V
• IC Continuous collector current500mA
• VR Clamping diode reverse voltage50V
• ESD Electrostatic discharge rating - HBM2kV

• Ir Infrared Obstacle Avoidance Sensor Module Operating Voltage : 5V DC
• submersible pump Operating Voltage: Dc 3v to 6v
• Power Consumption: 0.4W To 1.5W
• Rate Of Flow: 80 - 120L/Hr Lift : 1.1M Max.
• 1- Low Pressure Mist Nozzle, 6- M2F wire

• Transistor Polarity: NPN; CollectorEmitter Voltage: 50V; CollectorBase Voltage: 60V
• Continuous Collector Current: 0.5A; Emitter Base Voltage: 5V; Power Dissipation: 800mW
• Operating Temperature Range: -65 200 degreeC; Output Capacitance: 20pF; DC Current Gain: 40-300
• High Ruggedness; Simple drive requirements; High safe operating area
• For low distortion complementary designs; Easy to carry and handle; Package: TO-39 Metal

• PNP, silicon transistor; Plastic Package
• Max Collector Continuous Current: 600 mAdc
• Max Collector-Emitter Voltage: 40 Vdc
• Max Collector-Base Voltage: 40 Vdc
• Max Emitter-Base Voltage: 5 Vdc

• NPN, Silicon
• Max Collector Continuous Current: 800 mA
• Max Collector-Emitter Voltage: 50 V
• Max Emitter-Base Voltage: 5 V

• Sigma Electronics IGBT BT25T120 , Original, N-Chanel IGBT 25A,1200V transistor
• Extremely Enhanced Avalanche Capability

• PNP, silicon transistor
• Metal Package
• Max Collector Continuous Current: 0.6 A
• Max Collector-Emitter Voltage: 40 Vdc
• Max Collector-Base Voltage: 60 Vdc

• Transistor Type: NPN
• Max Collector Continuous Current: 15 A
• Max Base Current: 1.5 A
• Max Collector-Emitter Voltage: 230 V
• Max Collector-Base Voltage: 230 V

• Product Name: Power Transistors; Model: BC547
• Package Type: TO-92; Transistor Type: PNP
• Collector-Base Voltage: 40V; Collector Current: 0.5A
• Total Power Dissipation: 625mW; Operating Ambient Temperature: -55C - +150C(Gesamtverlustleistung: 0,625 W; Betriebsumgebungstemperatur: -55 degree C - + 150 degree C
• Weight: 24g; Package Content: 150(+/-2%)pcs x Power Transistor(Gewicht: 24g; Packungsinhalt: 150 (+/- 2%) Stk. X Power Transistor

• PNP, Silicon
• Max Collector Continuous Current: 500 mA
• Max Collector-Emitter Voltage: 300 V
• Max Emitter-Base Voltage: 3 V