Transistors By Generic

• Transistor Polarity: PNP; CollectorEmitter Voltage (VCEO): 50V; CollectorBase Voltage (VCBO): 60V; Continuous Collector Current (Ic): 1A; For low distortion complementary designs
• Emitter Base Voltage (VEBO): 5V; Power Dissipation (Pd): 800mW; Operating Temperature Range: -65 ~ 200 degreeC; Output Capacitance (Cobo): 20pF; Easy to carry and handle
• DC Current Gain (hFE): 40-300; High Ruggedness; Simple drive requirements; The high safe operating area; Package: TO-39 Metal
• Applications Include:- General-purpose switching and amplification; General Purpose Medium Power Transistor
• Packaged by:- Sharvi Technologies (OPC) Pvt. Ltd.; Address:- #09, CK Nagar, AECS layout, Hosa Road, Bangalore-560100

• Part No: BC237; Manufacturer: BEL
• NPN, Silicon; Max Collector Continuous Current: 100 mA
• Max Collector-Emitter Voltage: 50 V; Max Collector-Base Voltage: 45 V; Max Emitter-Base Voltage: 6 V
• Transition Frequency: 250MHz; Operating Temperature Range: -55 150 degreeC
• Mounting Type: Through Hole; Package: TO-92; RoHS Compliant

• Max Collector Current(IC): 3A
• Transistor Type: NPN
• Max Transition Frequency (fT): 90 MHz
• Max Collector-Emitter Voltage (VCE): 30V
• Max Emitter-Base Voltage (VEBO): 5V

• IRFP150N MOSFET 100V 42A N-Channel Power MOSFET

• Lead Formed for Surface Mount Applications in Plastic Sleeves; Surface Mount Replacements for 2N60402N6045 Series, TIP120TIP122 Series, and TIP125TIP127 Series; Monolithic Construction With Builtin BaseEmitter Shunt Resistors; High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc; Epoxy Meets UL 94 V0 @ 0.125 in
• Series: MJD122; Product Category: Darlington Transistors; Configuration: Single; Transistor Polarity: NPN
• Collector-Emitter Voltage: 100V; Emitter- Base Voltage: 5V; Collector- Base Voltage: 100V; Maximum DC Collector Current: 8A
• Maximum Collector Cut-off Current: 10 uA; Power Dissipation: 20 Watts; Operating Temperature: -65 degreeC ~ +150 degreeC; Continuous Collector Current: 8A
• DC Collector/Base Gain hFE Min: 100, 1000; Mounting Style: SMD/SMT; Package/Case: TO-252-3 (DPAK)

• PNP, Silicon
• Max Collector Continuous Current: 2 A
• Max Collector-Emitter Voltage: 55 V
• Max Emitter-Base Voltage: 5 V

• PNP, Silicon
• Max Collector Continuous Current: 3 A
• Max Collector-Emitter Voltage: 55 V
• Max Emitter-Base Voltage: 5 V

• PNP
• Max Collector Continuous Current: 1 A
• Max Collector-Emitter Voltage: 30 V
• Max Collector-Base Voltage: 40 V
• Max Emitter-Base Voltage: 10 V

• PNP, Silicon; Package : TO-225-3; Operating Temperature: 55 ~ +150 C
• Max Collector Continuous Current: 4 A
• Max Collector-Emitter Voltage: 45 V
• Max Collector-Base Voltage: 45 V
• Max Emitter-Base Voltage: 5 V

• Case/Package: TSSOP; Mount: Surface Mount; Number of Pins: 16
• Supply Voltage: 50V Max?; Collector-Emitter Breakdown Voltage: 50V; Collector-Emitter Saturation Voltage: 1.1V
• Collector-Emitter Voltage (VCEO): 50V; Collector Current: 500mA Max; Operating Temperature: -20~70 degreec
• Applications Include:- Relay Drivers; Stepper and DC Brushed Motor Drivers; Lamp Drivers; Display Drivers (LED and Gas Discharge); Line Drivers; Logic Buffers
• Packaged by:- Sharvi Technologies (OPC) Pvt. Ltd.; Address:- #09, CK Nagar, AECS layout, Hosa Road, Bangalore-560100

• Collector-Base Voltage (Vcb) (V) :75
• Emitter-Base Voltage (Veb) (V):6
• Junction Temperature ( degreeC):-55 to +150

• Transistor Polarity: PNP
• Collector-Base Voltage (VCBO): 50V
• Collector-Emitter Voltage (VCEO): 50V