INVENTO 5Pcs BD139 Bipolar (BJT) Single Transistor, NPN, 80 V, 1.25 W, 1.5 A, 250 hFE
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Home » Electrical Components » Transistors » INVENTO 5Pcs BD139 Bipolar (BJT) Single Transistor, NPN, 80 V, 1.25 W, 1.5 A, 250 hFE
Product Details :
- Brand : INVENTO
- Manufacturer : INVENTO
- Country of Origin : India
- Colour : Black
- Number of Memory Sticks : 5
- Item Weight : 50 g
- Product Dimensions : 1.5 x 0.5 x 0.5 cm; 50 g
- Item part number : ISC 783
- Item Height : 5 Millimeters
- Item Width : 5 Millimeters
- Are batteries included? : No
Product Features :
- The BD139 from STMicroelectronics is a through hole NPN complementary low voltage transistor in TO-126 (SOT-32) package. This device manufactured in epitaxial planar technology. Used for audio amplifiers and drivers, utilizing complementary or quasi complementary circuits.
- Collector to emitter voltage (Vce) is 80V. Collector current (Ic) is 1.5A
- Power dissipation (Pd) is 12.5W. Collector to emitter saturation voltage of 500mV at 0.5A collector current.
- DC current gain (hFE) of 25 at 0.5A collector current. Operating junction temperature range from 150 degreeC.
- Package Include: 5 x BD139
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